TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

MLA

Lin Zhou, et al. “TiAlNiAu Contacts for Ultrathin AlN/GaN High Electron Mobility Transistor Structures.” Journal of Applied Physics, vol. 108, no. 8, Oct. 2010, p. 084513. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.243912490&authtype=sso&custid=ns315887.

APA

Lin Zhou, Pearton, S. J., Ren, F., Dabiran, A., Smith, D. J., & Chang, C. Y. (2010). TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures. Journal of Applied Physics, 108(8), 084513.

Chicago

Lin Zhou, S.J. Pearton, F. Ren, Amir Dabiran, David J. Smith, and C.Y. Chang. 2010. “TiAlNiAu Contacts for Ultrathin AlN/GaN High Electron Mobility Transistor Structures.” Journal of Applied Physics 108 (8): 084513. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.243912490&authtype=sso&custid=ns315887.