Quantitative imaging of electronic nonuniformities in Cu(In,Ga)[Se.sub.2] solar cells

Equations describing effect of electronic nonuniformities on electroluminescence (EL) and the electron beam induced current (EBOC) images are analyzed on Cu(In,Ga)[Se.sub.2] solar cells. The samples have shown the largest variation in carrier collection function on a length scale of over 100 [micro]m while the band gap has varied almost linearly across the cell and the impact of shunt, series and stack resistances on EL images is discussed.