Numerical simulation of charge transport in disordered organic semiconductor devices

A versatile, robust and efficient means are provided for simulating organic semiconductor devices, which have allowed for the direct solution of the steady-state drift-diffusion problem. The studies have shown that the numerical methods have performed well in combination with advanced physical transport model such as energetic Gaussian disorder, density-dependent and field-dependent mobilities, the generalized Einstein diffusion, traps, and its consistent charge injection model.