Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode

A revised mechanism is described for the hole injection enhancement by analyzing a prototype interface of pentacene/LiF/indium tin oxide (ITO ) anode. The studies have shown that the reduction in the hole injection barrier is not a major factor for the hole injection enhancement and that a LiF insulating buffer layer has enhanced both injection barriers and tunneling through the barrier when a bias is applied.