Power loss by a two-dimensional hole gas in a Si/[Si.sub.0.8][Ge.sub.0.2] heterostructure over a wide temperature range

Authors :: Kubakaddi, S.S.
Katti, V.S.
Lehmann, D.
Source :: Journal of Applied Physics. June 15, 2010, Vol. 107 Issue 12, 123716-1-123716-7
Publication Year :: 2010
Abstract: The power loss of two-dimensional hole gas (2DHG) due to acoustic phonons via deformation potential coupling and Pekar mechanism is calculated by considering the temperature dependent screening. Hot phonon effect has reduced the power loss of 2DHG and the power loss calculations are carried out for different carrier concentrations.

Subjects :: Deformations (Mechanics) -- Analysis
Germanium -- Electric properties
Germanium -- Thermal properties
Phonons -- Research
Silicon alloys -- Thermal properties
Silicon alloys -- Electric properties
Physics

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