Optimal composition of europium gallium oxide thin films for device applications

The optical and physical effects of high europium concentration on the europium gallium oxide [([Eu.sub.x][Ga.sub.1-x]).sub.2][O.sub.3] thin films are analyzed by using photoluminescence (PL) spectroscopy, x-ray diffraction and Rutherford backscattering spectrometry. The studies have shown that the optimal doping for optoelectronic devices based on [([Eu.sub.x][Ga.sub.1-x]).sub.2][O.sub.3] thin films is between 5 and 10 mol%.