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First principle calculation of the leakage current through Si[O.sub.2] and Si[O.sub.x][N.sub.y] gate dielectrics in MOSFETs

First principle calculation of the leakage current through Si[O.sub.2] and Si[O.sub.x][N.sub.y] gate dielectrics in MOSFETs

Authors :
Nadimi, E.
Planitz, P.
Ottking, R.
Wieczorek, K.
Radehaus, C.
Source :
IEEE Transactions on Electron Devices. March, 2010, Vol. 57 Issue 3, p690, 6 p.
Publication Year :
2010

Details

Language :
English
ISSN :
00189383
Volume :
57
Issue :
3
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.223641081