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First principle calculation of the leakage current through Si[O.sub.2] and Si[O.sub.x][N.sub.y] gate dielectrics in MOSFETs
First principle calculation of the leakage current through Si[O.sub.2] and Si[O.sub.x][N.sub.y] gate dielectrics in MOSFETs
- Source :
- IEEE Transactions on Electron Devices. March, 2010, Vol. 57 Issue 3, p690, 6 p.
- Publication Year :
- 2010
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.223641081