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Origin of characteristics differences between top and bottom contact organic thin film transistors
- Source :
- Journal of Applied Physics. March 1, 2010, Vol. 107 Issue 5, 053709-1-053709-7
- Publication Year :
- 2010
-
Abstract
- The differences in drain current and drain voltage characteristics of top and bottom contact organic thin film transistors (OTFTs) are studied by an OTFT devices simulator. The mechanism behind the intrinsic characteristics differences is the deficiency of carriers at the source-channel interface, which has resulted to a very high potential drop that the bottom contact devices suffer more.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 107
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.223405721