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Origin of characteristics differences between top and bottom contact organic thin film transistors

Authors :
Ishikawa, Yoshinori
Wada, Yasuo
Toyabe, Toru
Source :
Journal of Applied Physics. March 1, 2010, Vol. 107 Issue 5, 053709-1-053709-7
Publication Year :
2010

Abstract

The differences in drain current and drain voltage characteristics of top and bottom contact organic thin film transistors (OTFTs) are studied by an OTFT devices simulator. The mechanism behind the intrinsic characteristics differences is the deficiency of carriers at the source-channel interface, which has resulted to a very high potential drop that the bottom contact devices suffer more.

Details

Language :
English
ISSN :
00218979
Volume :
107
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.223405721