Polymer field-effect transistors based on semiconducting polymer heterojunctions

Authors :: Chuan Liu
Henning Sirringhaus
Source :: Journal of Applied Physics. Jan 1, 2010, Vol. 107 Issue 1, 014516-1-014516-7
Publication Year :: 2010
Abstract: Top-gate polymer field-effect transistors which are generated based on charge accumulation in bilayers of two semiconducting polymers are reported. The results indicated that in order to block the charge transfer across the heterojunction, at least 1.eV offset is required between the ionization potential

Subjects :: Charge transfer -- Analysis
Field-effect transistors -- Structure
Field-effect transistors -- Electric properties
Ionization -- Analysis
Polymers -- Electric properties
Physics

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