Micropipe absorption mechanism of pore growth at foreign polytype boundaries in SiC crystals

Formation of pores at foreign polytype boundaries in bulk SiC crystals is analyzed by using synchrotron radiation phase-sensitive radiography, optical and scanning electron microscopies and color photoluminescence. The studies have shown that the pore can either be a separate micropipe, or grow up to a certain length or occupy the whole facet of the inclusion depending on the inclusion distortion.