The enhanced role of shallow-trench isolation in ionizing radiation damage of 65 nm RF-CMOS on SOI

Subjects

Subjects :

Complementary metal oxide semiconductors -- Electric properties
Silicon-on-isolator -- Electric properties
Ionization -- Analysis
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189499

Volume :

56

Issue :

6

Database :

Gale General OneFile

Journal :

IEEE Transactions on Nuclear Science

Publication Type :

Academic Journal

Accession number :

edsgcl.217012233