Atomistic analysis of strain relaxation in [110]-oriented biaxially strained ultrathin copper films

The study results of a systematic atomic-scale computational analysis of strain relaxation mechanisms and the related defect dynamics in nanometer-scale thin or ultrathin Cu films that are subjected to a broad range of biaxial tensile strains are reported. The defect nucleation mechanisms and the high-strain response of the thin films are found to be significantly different from those observed in -oriented Cu thin films.