Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

Authors :: Cen, Z. H.
Chen, T. P.
Ding, L.
Liu, Y.
Liu, Z.
Yang, M.
Wong, J. I.
Goh, W. P.
Zhu, F. R.
Fung, S.
Source :: IEEE Transactions on Electron Devices. Dec, 2009, Vol. 56 Issue 12, p3212, 6 p.
Publication Year :: 2009

Subjects :: Electroluminescence -- Analysis
Silicon nitride -- Electric properties
Silicon nitride -- Optical properties
X-ray spectroscopy -- Usage
Business
Electronics
Electronics and electrical industries

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