Quantification of drain extension leakage in a scaled bulk germanium PMOS technology

Authors :: Eneman, G.
De Jaeger, B.
Simoen, E.
Brunco, D. P.
Hellings, G.
Mitard, J.
De Meyer, K.
Meuris, M.
Heyns, M. M.
Source :: IEEE Transactions on Electron Devices. Dec, 2009, Vol. 56 Issue 12, p3115, 8 p.
Publication Year :: 2009

Subjects :: Complementary metal oxide semiconductors -- Analysis
Voltage -- Measurement
Germanium -- Electric properties
Electric currents, Vagrant -- Measurement
Business
Electronics
Electronics and electrical industries

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