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Zero-bias mixer based on AlGaN/GaN lateral field-effect diodes for high-temperature wireless sensor and RFID applications
- Source :
- IEEE Transactions on Electron Devices. Dec, 2009, Vol. 56 Issue 12, p2888, 7 p.
- Publication Year :
- 2009
- Subjects :
- Aluminum compounds -- Electric properties
Aluminum compounds -- Thermal properties
Field-effect transistors -- Design and construction
Gallium compounds -- Electric properties
Gallium compounds -- Thermal properties
Radio frequency identification (RFID) -- Design and construction
Wireless sensor networks -- Design and construction
Wireless sensor networks -- Thermal properties
Radio frequency identification
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.213657034