Thermal donor formation and annihilation at temperatures above 500 degrees C in Czochralski-grown Si

Research was conducted to examine thermal donor (TD) formation and annihilation at temperatures above 500 degrees c in Czochralski (CZ)-grown silicon. CZ-grown Si samples with an initial total TD concentration of ~5 x 10 to the 15th power/cm3 were used to study the annihilation of TDs. Results indicate that a model in which the individual TDx centers are represented by oxygen clusters of different sizes consistently explains the experimental data.