Environmental stability of candidate dielectrics for GaN-based device applications

The thermal and chemical stability of potential dielectrics for GaN-based devices in a GaN metal organic chemical vapor deposition (MOCVD) environment is examined and their suitability as a gate dielectric and as a regrowth mask for the selective area growth of GaN is discussed. The results have shown that the [Sc.sub.2][O.sub.3] films dissolved into MgO during annealing and that a ScN film has not formed on the surface.