Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

MLA

Deenapanray, P. N. K., et al. “Deep Level Transient Spectroscopy Characterization of 1 KeV He, Ne, and Ar Ion Bombarded, Epitaxially Grown n-Si.” Journal of Applied Physics, vol. 84, no. 5, Sept. 1998, p. 2565. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.21165033&authtype=sso&custid=ns315887.

APA

Deenapanray, P. N. K., Auret, F. D., Ridgway, M. C., Goodman, S. A., Myburg, G., & Malherbe, J. B. (1998). Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si. Journal of Applied Physics, 84(5), 2565.

Chicago

Deenapanray, P.N.K., F.D. Auret, M.C. Ridgway, S.A. Goodman, G. Myburg, and J.B. Malherbe. 1998. “Deep Level Transient Spectroscopy Characterization of 1 KeV He, Ne, and Ar Ion Bombarded, Epitaxially Grown n-Si.” Journal of Applied Physics 84 (5): 2565. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.21165033&authtype=sso&custid=ns315887.