Explanation of the rugged LDMOS behavior by means of numerical analysis

MLA

Reggiani, S., et al. “Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis.” IEEE Transactions on Electron Devices, vol. 56, no. 11, Nov. 2009, p. 2811. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.211531652&authtype=sso&custid=ns315887.

APA

Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R., & Seetharaman, S. (2009). Explanation of the rugged LDMOS behavior by means of numerical analysis. IEEE Transactions on Electron Devices, 56(11), 2811.

Chicago

Reggiani, S., G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise, and S. Seetharaman. 2009. “Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis.” IEEE Transactions on Electron Devices 56 (11): 2811. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.211531652&authtype=sso&custid=ns315887.