How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

Micro-Raman spectroscopy, photoluminescence, x-ray diffraction and reflection high-energy electron diffraction are used to examine molecular beam epitaxy of cubic gallium nitrate on silicon carbide films deposited by chemical vapor deposition on silicon. Results showed that the wurtzite/zinc-blende ratio is influenced by N/metal ratio and the initial substrate roughness.