Low-temperature epitaxial growth of Ge-rich Ge-Si-C alloys: microstructure, Raman studies, and optical properties

Several techniques were utilized to examine low-temperature molecular beam epitaxy of Ge-rich Ge-Si-C alloys grown on Si(100). These include in situ reflection high-energy electron diffraction, transmission electron microscopy, Raman scattering, ellipsometry and ex situ x-ray diffraction. Results showed that increasing C concentration decreases lattice parameter. No systematic changes were observed at the Ge-Ge mode.