Photofield interface impurity spectroscopy in blocked impurity band Si:B structures

Authors :: Pasquier, S.
Meny, C.
Asadauskas, L.
Leotin, J.
Aronzon, B.A.
Rylkov, V.V.
Conedera, V.
Fabre, N.
Regolini, J.L.
Morin, C.
Source :: Journal of Applied Physics. April 15, 1998, Vol. 83 Issue 8, p4222, 8 p.
Publication Year :: 1998
Abstract: A study was conducted to examine boron-doped silicon blocked impurity band (BIB) structures. The photoconductive spectral response was determined as a function of bias voltage while layers of the BIB structures were prepared in an industrial cluster reactor supporting reduced pressure and temperature. Results indicated sharp photoconductive peaks resulting from photon-induced transitions between ground and excited states of isolated impurities.

Subjects :: Silicon -- Research
Boron -- Research
Photons -- Research
Physics

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