X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures

The effects of layer thickness variations and deviation from perfect periodicity on high resolution x-ray diffraction (XRD) profiles were studied for (GaIn)As/Ga(PAs) symmetrically strained multiple quantum well heterostructures. Thickness modulation of the compressively restricted (GaIn)As layers resulted into peak splitting mainly on the tensile trained portion of the XRD pattern while modulating the tensile strained Ga(PAs) layer causes splitting on the compressively strained side.