Photon emission excited in paraffin-passivated GaAs surfaces by scanning tunneling microscopy

Photon emission of gallium arsenide substrates in air was observed through the use of scanning tunneling microscopy. The tunneling topography of the substrates which were protected with a film of paraffin oil showed the stability of the tunneling current. Through the emission spectrum, the emitted lights can be ascribed to radiative recombinations which were excited by scanning tunneling microscopy. Results also revealed that surface modifications influenced the decay luminescence intensity of gallium arsenide surfaces.