Radiation damage analysis of neutron irradiated double sided wedge strip microstrip silicon detector

A double sided wedge microstrip silicon detector and a few simple pad [p.sup.+]n junctions, from the same silicon wafer, have been characterized and studied after 1 MeV neutron irradiation. The devices have been irradiated simultaneously at room temperature up to a fluence of 7.9 [10.sup.13] [cm.sup.-2]. A heating cycle has been performed after irradiation on the pad devices. Thermally Stimulated Currents measurements have been performed after each annealing step to study the radiation induced lattice disorder. Five deep traps with energy levels from 0.27eV to 0.44eV have been observed with trap concentrations in the range of [10.sup.12] to [10.sup.14] [cm.sup.-3]. The evolution of the lattice disorder as a function of the annealing time has been correlated with the changes in the electrical characteristics of the wedge detector.