Scattering of electrons at threading dislocations in GaN

Electron transport parallel to dislocation lines is not affected by the scattering at charged dislocation lines, according to research based on a model developed to analyze the low transverse mobility of GaN by scattering of electrons at charged dislocation lines. The repulsive band bending around dislocations and the directional dependence of the dislocation scattering prevent vertical devices being affected by the scattering of electrons at threading dislocation lines.