Self-aggregated InAs quantum dots in GaAs

Authors :: Patane, A.
Alessi, M. Grassi
Intonti, F.
Polimeni, A.
Capizzi, M.
Martelli, F.
Nasi, L.
Lazzarini, L.
Salviati, G.
Bosacchi, A.
Franchi, S.
Source :: Journal of Applied Physics. May, 1998, Vol. 83 Issue 10, p5529, 7 p.
Publication Year :: 1998
Abstract: InAs quantum dots are self-aggregate at all values of the InAs layer thickness, with their density increasing as InAs nominal coverages increase. Transverse transmission electron microscopy also reveals that these quantum dots have mostly small base angles. Photoluminescence (PL) and PL excitation measurements of the optical properties of InAs/GaAs further show that a broad PL band is present in all samples. A narrow PL band is also observed for thin coverages.