Infrared luminescence decay and guided spectroscopy of Er3+ doped CaF2 molecular beam epitaxy layers

Authors :: Marco de Lucas, M.C.
Daran, E.
Jacquier, B.
Garapon, C.
Mugnier, J.
Pernas, P.
Munoz-Yague, A.
Source :: Journal of Applied Physics. March 15, 1998, Vol. 83 Issue 6, p3345, 5 p.
Publication Year :: 1998
Abstract: A study was conducted on the guided spectroscopy and infrared luminescence decay of Er3+-doped CaF2 layers grown on CaF2 substrates by molecular beam epitaxy as a function of Er3+ concentration in mol % range of 0.05-35. Decay luminescence at 1.54 micrometers was determined after excitations at 800 nm, 980 nm and 1.48 micrometers. Results show a strong rise in luminescence intensity from 10 to 35 mol % Er3+.

Subjects :: Thin films -- Optical properties
Molecular beams -- Research
Epitaxy -- Research
Physics

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