Exchange-correlation induced energy-level shift in quantum wells with strain

A study was conducted on the exchange-correlation effects-induced energy-level shift in quasi-two-dimensional InxGa1-xAs/InGaAsP quantum wells as a function of the sheet carrier density of various biaxial compressive strain. Results show that exchange energy and correlation energy influence the energy-level shifts. Results also reveal that the shifts increase when the sheet carrier density and biaxial compressive strain increase.