Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition

The monolayer growth of gallium arsenide at 650 degrees Celsius by metalorganic chemical vapor deposition was monitored using surface photoabsorption. Scanning photoluminescence measurements of the surfaces were performed to investigate the accuracy of the growth control. Results showed that the observed spectra and model computations in both line width and peak energies were highly compatible.