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A systematic empirical study of the effect of well number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers

Authors :
Prosyk, Kelvin
Simmons, John G.
Evans, J.D.
Source :
IEEE Journal of Quantum Electronics. March, 1998, Vol. 34 Issue 3, p535, 5 p.
Publication Year :
1998

Abstract

The well number and length were varied to examine how they affect the temperature sensitivity of the threshold current in InGaAsP-InP multiquantum-well lasers. The 175 lasers analyzed contained five identical devices, seven different well numbers and five different lengths for each well number. Results showed a connection between the threshold and efficiency, and a relation between temperature sensitivity of the threshold current and the optical gain/loss and current loss mechanisms within the lasers.

Details

ISSN :
00189197
Volume :
34
Issue :
3
Database :
Gale General OneFile
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
edsgcl.20736803