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High-power MWIR cascaded InAs-GaSb superlattice LEDs

Authors :
Koerperick, Edwin J.
Olesberg, Jonathan T.
Hicks, James L.
Prineas, John P.
Boggess, Thomas F., Jr.
Source :
IEEE Journal of Quantum Electronics. July-August, 2009, Vol. 45 Issue 7-8, p849, 5 p.
Publication Year :
2009

Abstract

Light emitting diodes (LEDs) incorporating InAs-GaSb superlattices (SLs) and multiple SL regions coupled with tunnel junctions are described. The studies have shown that saturation of optical output is because of both carrier leakage and Joule heating, with the latter being responsible for output limitations and device failure in large mesas.

Subjects

Subjects :
Antimony -- Electric properties
Antimony -- Optical properties
Gallium -- Electric properties
Gallium -- Optical properties
Indium -- Electric properties
Indium -- Optical properties
Light-emitting diodes -- Composition
Light-emitting diodes -- Analysis
Business
Computers
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189197
Volume :
45
Issue :
7-8
Database :
Gale General OneFile
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
edsgcl.207040419

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