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Gate rupture in ultra-thin gate oxides irradiated with heavy ions
- Source :
- IEEE Transactions on Nuclear Science. August, 2009, Vol. 56 Issue 4, p1964, 7 p.
- Publication Year :
- 2009
- Subjects :
- Oxides
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 56
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.206852136