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Silicon carbide for high signal to noise ratio MIPs detection from room temperature to 80[degrees]C

Authors :
Sciortino, S.
Lagomarsino, S.
Nava, F.
Source :
IEEE Transactions on Nuclear Science. August, 2009, Vol. 56 Issue 4, p2538, 5 p.
Publication Year :
2009

Subjects

Subjects :
Silicon carbide -- Properties
Silicon diodes -- Properties
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189499
Volume :
56
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
edsgcl.206852123

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