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The bipolar doping of ZnS via native defects and external dopants
- Source :
- Journal of Applied Physics. June 1, 2009, Vol. 105 Issue 11, 113704-1-113704-6
- Publication Year :
- 2009
-
Abstract
- The first-principle total-energy calculations are employed to perform a systematic studies on the dopability of both n- and p-type ZnS compared to that of ZnO. The results suggested that native n-type doping of ZnS with dpants is harder to achieve than in ZnO due to the readiness of forming native compensating centers and higher ionization energy of donors in ZnS.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.206634302