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The bipolar doping of ZnS via native defects and external dopants

Authors :
Yanqin Gai
Jingbo Li
Bin Yao
Jian-Bai Xia
Source :
Journal of Applied Physics. June 1, 2009, Vol. 105 Issue 11, 113704-1-113704-6
Publication Year :
2009

Abstract

The first-principle total-energy calculations are employed to perform a systematic studies on the dopability of both n- and p-type ZnS compared to that of ZnO. The results suggested that native n-type doping of ZnS with dpants is harder to achieve than in ZnO due to the readiness of forming native compensating centers and higher ionization energy of donors in ZnS.

Details

Language :
English
ISSN :
00218979
Volume :
105
Issue :
11
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.206634302