The influence of TiN thickness and Si[O.sub.2] formation method on the structural and electrical properties of TiN/Hf[O.sub.2]/Si[O.sub.2] gate stacks

Authors :: Vellianitis, Georgios
van Dal, Mark J.H.
Boccardi, Guillaume
Duriez, Blandine
Voogt, Frans C.
Kaiser, Monja
Witters, Liesbeth
Lander, Robert J.P.
Source :: IEEE Transactions on Electron Devices. July, 2009, Vol. 56 Issue 7, p1548, 6 p.
Publication Year :: 2009
Abstract: The effect of controllable process parameters such as metal-gate physical thickness and interfacial-layer-formation method on the electrical and structural properties of TiN/Hf[O.sub.2]/Si[O.sub.2] gate stacks is studied. Hf-rich chemical interfacial oxides have not degraded the device performance and a small reduction in transconductance is seen for physically thinner interfacial layers.

Subjects :: Gates (Electronics) -- Analysis
Hafnium -- Electric properties
Silica -- Electric properties
Titanium compounds -- Electric properties
Titanium compounds -- Structure
Business
Electronics
Electronics and electrical industries

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