Effects of gallium doping on the properties of amorphous-SiC:H films prepared by magnetron cosputtering

Research was conducted to study the effects of gallium doping on the structural, electrical, optical and optoelectronic properties of amorphous-SiC:H films. Doping at very low Ga concentrations below Z = 10/3 leads to a reduction of photoconductivity. Results indicate that the n-type conduction of the undoped film confirmed by a thermoelectric power experiment is compensated by the gallium doping.