High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions

Authors :: Sun, J.Z.
Gaidis, M.C.
Hu, G.
O'Sullivan, E.J.
Brown, S.L.
Nowak, J.J.
Trouilloud, P.L.
Worledge, C.
Source :: Journal of Applied Physics. April 1, 2009, Vol. 105 Issue 7, 07D109-1-07D109-3
Publication Year :: 2009
Abstract: The switching probability is dependent on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal of CeFeB/MgO-based magnetic tunnel junctions. The probability of magnetic switching in spin-torque-driven switches has decreased due to a backhopping behavior occurring at high bias and it is asymmetric in bias voltage.

Subjects :: Cerium -- Magnetic properties
Cerium -- Thermal properties
Cobalt alloys -- Magnetic properties
Cobalt alloys -- Thermal properties
Iron alloys -- Magnetic properties
Iron alloys -- Thermal properties
Magnesium oxide -- Magnetic properties
Magnesium oxide -- Thermal properties
Magnetic fields -- Analysis
Tunneling (Physics) -- Analysis
Physics

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