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Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)
- Source :
- Journal of Applied Physics. Jan 1, 1998, Vol. 83 Issue 1, p469, 7 p.
- Publication Year :
- 1998
-
Abstract
- Researchers examined the sub band-edge emission bands of AlxGa1-xN films deposited on 6H-SiC(0001) surfaces. Cathodoluminescence revealed the presence of strong band-edge emission at 4.2 K. This is attributable to donor-bound excitons and two deep bands, one being a donor-shallow-acceptor pair emission, and the other being yellow emission bands in the GaN. Both bands had an energy shift with increasing Al mole fraction.
- Subjects :
- Thin films -- Observations
Emission spectroscopy -- Usage
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 83
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.20455117