Shear strains in dry etched GaAs/A1As wires studied by high resolution x-ray reciprocal space mapping

MLA

Darhuber, A. A., et al. “Shear Strains in Dry Etched GaAs/A1As Wires Studied by High Resolution x-Ray Reciprocal Space Mapping.” Journal of Applied Physics, vol. 83, no. 1, Jan. 1998, p. 126. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.20455069&authtype=sso&custid=ns315887.

APA

Darhuber, A. A., Bauer, G., Wang, P. D., & Sotomayor Torres, C. M. (1998). Shear strains in dry etched GaAs/A1As wires studied by high resolution x-ray reciprocal space mapping. Journal of Applied Physics, 83(1), 126.

Chicago

Darhuber, A.A., G. Bauer, P.D. Wang, and C.M. Sotomayor Torres. 1998. “Shear Strains in Dry Etched GaAs/A1As Wires Studied by High Resolution x-Ray Reciprocal Space Mapping.” Journal of Applied Physics 83 (1): 126. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.20455069&authtype=sso&custid=ns315887.