4f-shell configuration of Yb in InP studied by electron spin resonance

Measurements on Yb-doped n-type and p-type InP layers using electron spin resonance (ESR) techniques are made to evaluate ESR intensity and spectra of said products. Samples are grown from semi-insulating InP substrates using tris(cyclopentadienyl)ytterbium as Yb source. Test results showing a higher ESR intensity for p-type compared with n-type samples may indicate that an electron captured by the AE trap is in the Yb 4f shell.