Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Results of experiments conducted on low frequency noise in quasiself-aligned bipolar n-p-n junction transistors, with widely varying emitter/base junction dimensions, are compared with previous results obtained on devices of the same type. Results show that the power spectral density of base current fluctuations was dependent linearly on the inverse of the area of the emitter/base interface junction. Findings imply the localization of the low frequency noise sources on the interface rather than on the transistor perimeter.