Initial growth of chemical-vapor-deposited SiO2

Atomic force microscopy was used to examine the deposited layers on three single-crystalline substrates, namely, alumina, CaF2 and hydrogen-terminated silicon. Amorphous SiO2 was deposited on the three substrates through the use of chemical vapor deposition. Comparison of the surface roughness with the film thickness, as determined independently by ellipsometry, revealed that the thinnest film formed on the silicon surface (2.4 mm) was continuous.