Transient enhanced diffusion of boron in presence of end-of-range defects

The relationship between boron anomalous diffusion and end-of-range defects is discussed. Transient enhanced diffusion (TED) of boron, the formation of end-of-range (EOR) defects in the preamorphization threshold and the formation of extended defects at the projected range of implanted atoms at doses below the amorphization threshold are ascribed to the presence of a supersaturation of Si self-interstitials in ion implanted silicon.