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On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Source :
- IEEE Transactions on Electron Devices. May, 2009, Vol. 56 Issue 5, p1007, 13 p.
- Publication Year :
- 2009
-
Abstract
- Several studies and experiments are conducted to determine the performance limits of the cryogenically operated silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs). The capabilities of different transistors of achieving different terahertz speeds are also discussed.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.202456704