Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

The impact of the phosphorus concentration [P] on the solid-phase epitaxial regrowth rate of preamorphized p-type germanium is analyzed by using Rutherford backscattering, secondary ion mass spectrometry and transmission electron microscopy. The regrowth retardation is associated with segregation across the crystalline/amorphous boundary and snow plow of P in excess of the metastable solid solubility in the recrystallized material.