Energy-band-engineered unified-RAM (URAM) cell on buried [Si.sub.1-y][C.sub.y] substrate for multifunctioning flash memory and 1T-DRAM

A band-offset-based unified-RAM (URAM) cell fabricated on a Si/[Si.sub.1-y][C.sub.y] substrate is used for the fusion of a nonvolatile memory (NVM) and a capacitorless 1T-DRAM. The band-engineered URAM has yielded a cost-effective process that is compatible with a conventional body-tied FinFET SONOS and the URAM has shown highly reliable NVM and high-speed 1T-DRAM operations in a single memory cell.