Strain effects on electronic bandstructures in nanoscaled silicon: from bulk to nanowire

Authors :: Maegawa, Tadashi
Yamauchi, Tsuneki
Tsuchiya, Hideaki
Ogawa, Matsuto
Source :: IEEE Transactions on Electron Devices. April, 2009, Vol. 56 Issue 4, p553, 7 p.
Publication Year :: 2009
Abstract: A comparative computational study on the strain effects in Si nanostructures including bulk, thin film and nanowire configurations is described. First principles calculation is used for identifying the bandstructure parameters such as band splitting energy and transport effective mass and it is shown that bulk Si and Si thin films have similar strain effects on the bandstructure parameters under uniaxial strain.

Subjects :: Metal oxide semiconductor field effect transistors -- Evaluation
Nanotechnology -- Research
Silicon -- Electric properties
Silicon -- Mechanical properties
Strain gages -- Usage
Business
Electronics
Electronics and electrical industries

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