Ferroelectric nonvolatile memory technology: applications and integration challenges

Authors :: Zurcher, Peter
Jones, Robert E.
Chu, Peir Y.
Taylor, Deborah J.
White, Bruce E., Jr.
Zafar, Sufi
Jiang, Bo
Lii, Yeong-Jyh Tom
Gillespie, Sherry J.
Source :: IEEE Transactions on Components, Packaging and Manufacturing Technology Part. June, 1997, Vol. 20 Issue 2, p175, 7 p.
Publication Year :: 1997
Abstract: Problems encountered in the integration of ferroelectric nonvolatile memories with complementary metal-oxide semiconductor (CMOS) technology for low-voltage and low-power applications are considered. The true high-speed, low-voltage write capabilities of ferroelectric memories must be realized for this technology to be commercially viable. Attempts to integrate SrBi2Ta2O9 ferroelectrics with CMOS are reviewed.

Subjects :: Ferroelectric devices -- Analysis
Ferroelectric storage cells -- Analysis
Thin films -- Analysis
Complementary metal oxide semiconductors -- Usage
Business
Engineering and manufacturing industries
Science and technology

ISSN :: 10709886
Volume :: 20
Issue :: 2
Database :: Gale General OneFile
Journal :: IEEE Transactions on Components, Packaging and Manufacturing Technology Part
Publication Type :: Academic Journal
Accession number :: edsgcl.20090594

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