Impact ionization noise in SiGe HBTs: comparison of device and compact modeling with experimental results

MLA

Sakalas, Paulius, et al. “Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling with Experimental Results.” IEEE Transactions on Electron Devices, vol. 56, no. 2, Feb. 2009, p. 328. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.200145006&authtype=sso&custid=ns315887.

APA

Sakalas, P., Ramonas, M., Schroter, M., Jungemann, C., Shimukovitch, A., & Kraus, W. (2009). Impact ionization noise in SiGe HBTs: comparison of device and compact modeling with experimental results. IEEE Transactions on Electron Devices, 56(2), 328.

Chicago

Sakalas, Paulius, Mindaugas Ramonas, Michael Schroter, Christoph Jungemann, Artur Shimukovitch, and Wolfgang Kraus. 2009. “Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling with Experimental Results.” IEEE Transactions on Electron Devices 56 (2): 328. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.200145006&authtype=sso&custid=ns315887.